Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications

Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications

In this study we investigate the coupled impacts of poly-Si thickness, dopant activation annealing temperature and hydrogenation on n-TOPCon and p-TOPCon passivated contacts. Their performance is first assessed by Photoconductance Decay (PCD) measurements on symmetrical and asymmetrical cell precur...

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Bibliographic Details
Main Authors: Julci Ditsougou, Thibaut Desrues, Anne Kaminski, Sébastien Dubois
Format: Article
Language:English
Published: TIB Open Publishing 2025-02-01
Series:SiliconPV Conference Proceedings
Subjects:
TOPcon
Passivated Contact
Hydrogenation
Solar Cell
Bottom-Cell
2T Tandem
Online Access:https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1310
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