Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications
In this study we investigate the coupled impacts of poly-Si thickness, dopant activation annealing temperature and hydrogenation on n-TOPCon and p-TOPCon passivated contacts. Their performance is first assessed by Photoconductance Decay (PCD) measurements on symmetrical and asymmetrical cell precur...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
TIB Open Publishing
2025-02-01
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| Series: | SiliconPV Conference Proceedings |
| Subjects: | |
| Online Access: | https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1310 |
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