Gavoshani, A., & Orouji, A. A. Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage. Wiley.
Chicago Style (17th ed.) CitationGavoshani, Amir, and Ali A. Orouji. Design Considerations of a Novel Triple Oxide Trench Deep Gate LDMOS to Improve Self‐heating Effect and Breakdown Voltage. Wiley.
MLA (9th ed.) CitationGavoshani, Amir, and Ali A. Orouji. Design Considerations of a Novel Triple Oxide Trench Deep Gate LDMOS to Improve Self‐heating Effect and Breakdown Voltage. Wiley.
Warning: These citations may not always be 100% accurate.