Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage
Abstract In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compared with a conventional LDMOS (C‐LDMOS). In this cas...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-05-01
|
| Series: | IET Circuits, Devices and Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/cds2.12102 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|