Research on Fault Prediction of Power Devices in Rod Control Power Cabinets Based on BiTCN-Attention Transfer Learning Model

Research on Fault Prediction of Power Devices in Rod Control Power Cabinets Based on BiTCN-Attention Transfer Learning Model

The Insulated Gate Bipolar Transistor (IGBT) is the key power device in the rod control power cabinet of nuclear power plants; its reliable operation is of great significance for ensuring the safe and economical operation of the nuclear power plants. Therefore, it is necessary to conduct fault predi...

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Bibliographic Details
Main Authors: Zhi Chen, Liqi Ye, Yifan Jian, Meiyuan Chen, Yuan Min
Format: Article
Language:English
Published: MDPI AG 2024-10-01
Series:Micromachines
Subjects:
bidirectional temporal convolutional attention network
transfer learning
power device
fault prediction
Online Access:https://www.mdpi.com/2072-666X/15/11/1326
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