Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors
This study delves into the characterization of IGZO/ZnO bilayer memristors, examining the impact of ZnO thickness and voltage scan rate on device performance. Bilayer memristors with varying ZnO thicknesses were prepared using magnetron sputtering, and their electrical properties were evaluated. The...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0237063 |
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