AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES

AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES

In order to develop a technology for the growth of Al(Ga)N-based heterostructures, the effect of different molecular beam epitaxy growth conditions on the properties of AlN and AlGaN layers was studied. The optimal conditions for the growth of AlN buffer layers were established, which made it possib...

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Bibliographic Details
Main Authors: M. V. Rzheutski, Ja. A. Solovjov, A. G. Vainilovich, I. Ya. Svitsiankou, A. N. Pyatlitski, D. V. Zhyhulin, E. V. Lutsenko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-12-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
molecular beam epitaxy
structural properties
stimulated emission
2-dimensional electron gas
Online Access:https://doklady.bsuir.by/jour/article/view/2238
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