Setting the Emissivity of an Imaging Bolometer in the Surface Temperature Profile Measurement of SiC-Based MEMS Heaters
The proper usage of a bandwidth-limited imaging bolometer for the measurement of the lateral temperature profile of microstructures in Silicon-Carbide (SiC) is analyzed. The SiC spectral emissivity, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inl...
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2025-06-01
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| author | Reinoud Wolffenbuttel David Bilby Jaco Visser |
| author_facet | Reinoud Wolffenbuttel David Bilby Jaco Visser |
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| description | The proper usage of a bandwidth-limited imaging bolometer for the measurement of the lateral temperature profile of microstructures in Silicon-Carbide (SiC) is analyzed. The SiC spectral emissivity, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>ϵ</mi><mrow><mi>S</mi><mi>i</mi><mi>C</mi></mrow></msub><mrow><mo>(</mo><mi>λ</mi><mo>)</mo></mrow></mrow></semantics></math></inline-formula>, has a dip at <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>λ</mi><mo>∼</mo><mn>12</mn></mrow></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m, which is in the band of a typical commercially available instrument and complicates the selection of the value of the equivalent emissivity, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>ϵ</mi><mrow><mi>e</mi><mi>q</mi><mo>,</mo><mi>S</mi><mi>i</mi><mi>C</mi></mrow></msub></semantics></math></inline-formula>, in the instrument settings. The impact is analyzed by deduction using simulation, and by experimental validation. Membranes of 3C-SiC of 1000 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m diameter and 3 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m thickness have been fabricated on Si wafers, with integrated poly-SiC resistors for both membrane heating and on-membrane temperature measurement for calibration purposes. The optimum setting was found as <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>ϵ</mi><mrow><mi>e</mi><mi>q</mi><mo>,</mo><mi>S</mi><mi>i</mi><mi>C</mi></mrow></msub></semantics></math></inline-formula> = 0.705 ± 0.025 by deduction and as <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>ϵ</mi><mrow><mi>e</mi><mi>q</mi><mo>,</mo><mi>S</mi><mi>i</mi><mi>C</mi></mrow></msub></semantics></math></inline-formula> = 0.66 ± 0.06 by experimental validation in the temperature range 120 °C to 400 °C. The apparent temperature coefficient of emissivity, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>T</mi><mi>C</mi><mi>E</mi><mo><</mo></mrow></semantics></math></inline-formula> 2 × 10<sup>−4</sup> °C<sup>−1</sup> is due to the shift of the Wien peak wavelength relative to the instrument’s sensitivity band. |
| format | Article |
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| institution | Kabale University |
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| publishDate | 2025-06-01 |
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| spelling | doaj-art-729465c0ed20443892a26ef73e5741ca2025-08-20T03:29:43ZengMDPI AGMetrology2673-82442025-06-01523610.3390/metrology5020036Setting the Emissivity of an Imaging Bolometer in the Surface Temperature Profile Measurement of SiC-Based MEMS HeatersReinoud Wolffenbuttel0David Bilby1Jaco Visser2Laboratory for Electronic Instrumentation, Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The NetherlandsResearch and Advanced Engineering, Ford Motor Company, Dearborn, MI 48121, USAResearch and Advanced Engineering, Ford Motor Company, Dearborn, MI 48121, USAThe proper usage of a bandwidth-limited imaging bolometer for the measurement of the lateral temperature profile of microstructures in Silicon-Carbide (SiC) is analyzed. The SiC spectral emissivity, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>ϵ</mi><mrow><mi>S</mi><mi>i</mi><mi>C</mi></mrow></msub><mrow><mo>(</mo><mi>λ</mi><mo>)</mo></mrow></mrow></semantics></math></inline-formula>, has a dip at <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>λ</mi><mo>∼</mo><mn>12</mn></mrow></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m, which is in the band of a typical commercially available instrument and complicates the selection of the value of the equivalent emissivity, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>ϵ</mi><mrow><mi>e</mi><mi>q</mi><mo>,</mo><mi>S</mi><mi>i</mi><mi>C</mi></mrow></msub></semantics></math></inline-formula>, in the instrument settings. The impact is analyzed by deduction using simulation, and by experimental validation. Membranes of 3C-SiC of 1000 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m diameter and 3 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m thickness have been fabricated on Si wafers, with integrated poly-SiC resistors for both membrane heating and on-membrane temperature measurement for calibration purposes. The optimum setting was found as <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>ϵ</mi><mrow><mi>e</mi><mi>q</mi><mo>,</mo><mi>S</mi><mi>i</mi><mi>C</mi></mrow></msub></semantics></math></inline-formula> = 0.705 ± 0.025 by deduction and as <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>ϵ</mi><mrow><mi>e</mi><mi>q</mi><mo>,</mo><mi>S</mi><mi>i</mi><mi>C</mi></mrow></msub></semantics></math></inline-formula> = 0.66 ± 0.06 by experimental validation in the temperature range 120 °C to 400 °C. The apparent temperature coefficient of emissivity, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>T</mi><mi>C</mi><mi>E</mi><mo><</mo></mrow></semantics></math></inline-formula> 2 × 10<sup>−4</sup> °C<sup>−1</sup> is due to the shift of the Wien peak wavelength relative to the instrument’s sensitivity band.https://www.mdpi.com/2673-8244/5/2/36bolometer calibrationbolometer usageSilicon-CarbideSiC micro-heatersSiC MEMSSiC emissivity |
| spellingShingle | Reinoud Wolffenbuttel David Bilby Jaco Visser Setting the Emissivity of an Imaging Bolometer in the Surface Temperature Profile Measurement of SiC-Based MEMS Heaters Metrology bolometer calibration bolometer usage Silicon-Carbide SiC micro-heaters SiC MEMS SiC emissivity |
| title | Setting the Emissivity of an Imaging Bolometer in the Surface Temperature Profile Measurement of SiC-Based MEMS Heaters |
| title_full | Setting the Emissivity of an Imaging Bolometer in the Surface Temperature Profile Measurement of SiC-Based MEMS Heaters |
| title_fullStr | Setting the Emissivity of an Imaging Bolometer in the Surface Temperature Profile Measurement of SiC-Based MEMS Heaters |
| title_full_unstemmed | Setting the Emissivity of an Imaging Bolometer in the Surface Temperature Profile Measurement of SiC-Based MEMS Heaters |
| title_short | Setting the Emissivity of an Imaging Bolometer in the Surface Temperature Profile Measurement of SiC-Based MEMS Heaters |
| title_sort | setting the emissivity of an imaging bolometer in the surface temperature profile measurement of sic based mems heaters |
| topic | bolometer calibration bolometer usage Silicon-Carbide SiC micro-heaters SiC MEMS SiC emissivity |
| url | https://www.mdpi.com/2673-8244/5/2/36 |
| work_keys_str_mv | AT reinoudwolffenbuttel settingtheemissivityofanimagingbolometerinthesurfacetemperatureprofilemeasurementofsicbasedmemsheaters AT davidbilby settingtheemissivityofanimagingbolometerinthesurfacetemperatureprofilemeasurementofsicbasedmemsheaters AT jacovisser settingtheemissivityofanimagingbolometerinthesurfacetemperatureprofilemeasurementofsicbasedmemsheaters |