A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-Gate Metal-Oxide-Semiconductor Field-Effect-Transistors
Based on the minimum conduction band edge caused by the minimum channel potential resulting from the quasi-3D scaling theory and the 3D density of state (DOS) accompanied by the Fermi–Dirac distribution function on the source and drain sides, a unified semiconductor-device-physics-based ballistic mo...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
|
| Series: | Electronic Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-3978/5/4/20 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|