Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope effic...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9028242/ |
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