Data processing capability of polarization dynamics in ferroelectric-gate transistor-based physical reservoir computing
We investigated the relationship between the polarization characteristics of ferroelectric Hf _0.5 Zr _0.5 O _2 thin-films and data processing capability in physical reservoir computing. Ferroelectric-gate field-effect transistors (FeFETs) with a metal-ferroelectric-metal-insulator-semiconductor str...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adf372 |
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| Summary: | We investigated the relationship between the polarization characteristics of ferroelectric Hf _0.5 Zr _0.5 O _2 thin-films and data processing capability in physical reservoir computing. Ferroelectric-gate field-effect transistors (FeFETs) with a metal-ferroelectric-metal-insulator-semiconductor structure were employed with varying area ratios between the ferroelectric capacitors and floating gate-electrodes. The voltage applied to the ferroelectric layers was theoretically calculated using load line analysis and determined experimentally. In a time-series prediction task, the FeFETs showed low error rates under conditions that produced multiple hysteresis loops in dynamic transfer waveforms. The results indicate that data processing capability is improved when a substantial portion of polarization is switched. |
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| ISSN: | 1882-0786 |