Data processing capability of polarization dynamics in ferroelectric-gate transistor-based physical reservoir computing

Data processing capability of polarization dynamics in ferroelectric-gate transistor-based physical reservoir computing

We investigated the relationship between the polarization characteristics of ferroelectric Hf _0.5 Zr _0.5 O _2 thin-films and data processing capability in physical reservoir computing. Ferroelectric-gate field-effect transistors (FeFETs) with a metal-ferroelectric-metal-insulator-semiconductor str...

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Main Authors: Yu Ukezeki, Sota Inoue, Norifumi Fujimura, Tokuji Yokomatsu, Kensuke Kanda, Kazusuke Maenaka, Kasidit Toprasertpong, Shinichi Takagi, Takeshi Yoshimura
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
ferroelectric-gate field-effect transistors
physical reservoir computing
HfO2
nonlinearity
Online Access:https://doi.org/10.35848/1882-0786/adf372
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https://doi.org/10.35848/1882-0786/adf372

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