Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design
The superior dielectric and ferroelectric properties of HfO2-based thin films, coupled with excellent silicon compatibility, position them as highly attractive candidates for dynamic and ferroelectric random-access memories (DRAM and FeRAM). However, simultaneously achieving high dielectric constant...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-09-01
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| Series: | Journal of Materiomics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847825000061 |
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