Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design

Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design

The superior dielectric and ferroelectric properties of HfO2-based thin films, coupled with excellent silicon compatibility, position them as highly attractive candidates for dynamic and ferroelectric random-access memories (DRAM and FeRAM). However, simultaneously achieving high dielectric constant...

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Bibliographic Details
Main Authors: Yuchen Wang, Jiachen Li, Hansheng Zhu, Haifeng Bu, Xinzhe Du, Shengchun Shen, Yuewei Yin, Xiaoguang Li
Format: Article
Language:English
Published: Elsevier 2025-09-01
Series:Journal of Materiomics
Subjects:
HfO2-based film
Stacking structure
Ferrelectric polarization
High dielectric constant
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847825000061
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