Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design
The superior dielectric and ferroelectric properties of HfO2-based thin films, coupled with excellent silicon compatibility, position them as highly attractive candidates for dynamic and ferroelectric random-access memories (DRAM and FeRAM). However, simultaneously achieving high dielectric constant...
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Elsevier
2025-09-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847825000061 |
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| author | Yuchen Wang Jiachen Li Hansheng Zhu Haifeng Bu Xinzhe Du Shengchun Shen Yuewei Yin Xiaoguang Li |
| author_facet | Yuchen Wang Jiachen Li Hansheng Zhu Haifeng Bu Xinzhe Du Shengchun Shen Yuewei Yin Xiaoguang Li |
| author_sort | Yuchen Wang |
| collection | DOAJ |
| description | The superior dielectric and ferroelectric properties of HfO2-based thin films, coupled with excellent silicon compatibility, position them as highly attractive candidates for dynamic and ferroelectric random-access memories (DRAM and FeRAM). However, simultaneously achieving high dielectric constant (κ) and strong ferroelectricity in HfO2-based films presents a challenge, as high-κ and ferroelectricity are associated with the tetragonal and orthorhombic phases, respectively. In this study, we report both the good ferroelectric and dielectric properties obtained in W/Hf0.5Zr0.5O2 (HZO ∼6.5 nm)/W with morphotropic phase boundary structure by optimizing stacking sequence of HfO2 and ZrO2 sublayers. Notably, by alternating stacking of 1-cycle HfO2 with 1-cycle ZrO2 sublayers ((1–HfO2)/(1–ZrO2)), high-κ (>50) and large polarization (2Pr > 40 μC/cm2, after wake-up) can be achieved. Besides, the (1–HfO2)/(1–ZrO2) stacking configuration presents better thermal stability compared to other stacking sequences. Furthermore, the incorporation of an Al2O3 layer leads to a low leakage current density (<10−7 A/cm2 at 0.65 V) and high dielectric endurance over 1013 cycles (operating voltage ∼0.5 V). A low equivalent oxide thickness (EOT ∼0.53 nm) and considerable polarization with low leakage are simultaneously achieved. These results highlight the potential of HfO2-based films with optimized structural stacking as a trade-off approach for integrating DRAM and FeRAM on one-chip. |
| format | Article |
| id | doaj-art-6fffaa75956c417d81bb56d6c35a7f7f |
| institution | OA Journals |
| issn | 2352-8478 |
| language | English |
| publishDate | 2025-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj-art-6fffaa75956c417d81bb56d6c35a7f7f2025-08-20T02:35:21ZengElsevierJournal of Materiomics2352-84782025-09-0111510101610.1016/j.jmat.2025.101016Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking designYuchen Wang0Jiachen Li1Hansheng Zhu2Haifeng Bu3Xinzhe Du4Shengchun Shen5Yuewei Yin6Xiaoguang Li7Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, China; Corresponding author.Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, ChinaHefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, China; School of Physics and Electronics, Henan University, Kaifeng, 475004, Henan, China; Corresponding author.The superior dielectric and ferroelectric properties of HfO2-based thin films, coupled with excellent silicon compatibility, position them as highly attractive candidates for dynamic and ferroelectric random-access memories (DRAM and FeRAM). However, simultaneously achieving high dielectric constant (κ) and strong ferroelectricity in HfO2-based films presents a challenge, as high-κ and ferroelectricity are associated with the tetragonal and orthorhombic phases, respectively. In this study, we report both the good ferroelectric and dielectric properties obtained in W/Hf0.5Zr0.5O2 (HZO ∼6.5 nm)/W with morphotropic phase boundary structure by optimizing stacking sequence of HfO2 and ZrO2 sublayers. Notably, by alternating stacking of 1-cycle HfO2 with 1-cycle ZrO2 sublayers ((1–HfO2)/(1–ZrO2)), high-κ (>50) and large polarization (2Pr > 40 μC/cm2, after wake-up) can be achieved. Besides, the (1–HfO2)/(1–ZrO2) stacking configuration presents better thermal stability compared to other stacking sequences. Furthermore, the incorporation of an Al2O3 layer leads to a low leakage current density (<10−7 A/cm2 at 0.65 V) and high dielectric endurance over 1013 cycles (operating voltage ∼0.5 V). A low equivalent oxide thickness (EOT ∼0.53 nm) and considerable polarization with low leakage are simultaneously achieved. These results highlight the potential of HfO2-based films with optimized structural stacking as a trade-off approach for integrating DRAM and FeRAM on one-chip.http://www.sciencedirect.com/science/article/pii/S2352847825000061HfO2-based filmStacking structureFerrelectric polarizationHigh dielectric constant |
| spellingShingle | Yuchen Wang Jiachen Li Hansheng Zhu Haifeng Bu Xinzhe Du Shengchun Shen Yuewei Yin Xiaoguang Li Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design Journal of Materiomics HfO2-based film Stacking structure Ferrelectric polarization High dielectric constant |
| title | Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design |
| title_full | Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design |
| title_fullStr | Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design |
| title_full_unstemmed | Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design |
| title_short | Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design |
| title_sort | simultaneously achieving high κ and strong ferroelectricity in hf0 5zr0 5o2 thin film by structural stacking design |
| topic | HfO2-based film Stacking structure Ferrelectric polarization High dielectric constant |
| url | http://www.sciencedirect.com/science/article/pii/S2352847825000061 |
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