TCAD Simulation Study of Cylindrical Vertical Double-Surrounding-Gate a-InGaZnO FETs and Geometric Parameter Optimization

TCAD Simulation Study of Cylindrical Vertical Double-Surrounding-Gate a-InGaZnO FETs and Geometric Parameter Optimization

Threshold control of amorphous In-Ga-Zn-O field-effect transistor (a-IGZO FET) is generally a critical issue through material composition adjustment. Instead, this work reports a cylindrical vertical double-surrounding-gate (DSG) a-IGZO FET, featuring flexibility of threshold modulation, by the 3-D...

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Bibliographic Details
Main Authors: Yue Zhao, Lihua Xu, Chuanke Chen, Xufan Li, Kexin Shang, Di Geng, Lingfei Wang, Ling Li
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Vertical transistor
double-surrounding-gate
TCAD
a-IGZO
gate length
gate position
Online Access:https://ieeexplore.ieee.org/document/10836807/
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