Impact of Buffer Layer on Electrical Properties of Bow-Tie Microwave Diodes on the Base of MBE-Grown Modulation-Doped Semiconductor Structure

Impact of Buffer Layer on Electrical Properties of Bow-Tie Microwave Diodes on the Base of MBE-Grown Modulation-Doped Semiconductor Structure

Bow-tie diodes on the base of modulation-doped semiconductor structures are often used to detect radiation in GHz to THz frequency range. The operation of the bow-tie microwave diodes is based on carrier heating phenomena in an epitaxial semiconductor structure with broken geometrical symmetry. Howe...

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Bibliographic Details
Main Authors: Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Aldis Šilėnas, Andžej Lučun
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Crystals
Subjects:
modulation-doped semiconductor structure
microwave bow-tie diode
buffer layer
semi-insulating substrate
molecular beam epitaxy
super-lattice
Online Access:https://www.mdpi.com/2073-4352/15/1/50
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