Compact GaN HEMT Power Amplifier MMIC Delivering Over 40 W for Ku-Band Applications
This paper presents the design and implementation of a high-power amplifier (HPA) using a 250-nm gallium nitride (GaN) high electron mobility transistor (HEMT) process on a silicon carbide substrate. The HPA is engineered to optimize both output power and power density relative to chip size. The 1st...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10771749/ |
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