Improvements in reliability and radio frequency performance of junctionless tunnelling field effect transistor using p+ pocket and metal strip
Abstract In this article, a new p+ pocket stacked gate oxide junctionless tunnelling field effect transistor (junction less tunnelling field effect transistor (JLTFET)) which has metal strip in gate oxide layer is proposed for analogue/RF circuit applications. Due to the insertion of a p+ pocket in...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-07-01
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| Series: | IET Circuits, Devices and Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/cds2.12162 |
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