Bismuthene nanoribbon topological field-effect transistor: a DFT-NEGF-based study
Topological field-effect transistors (TFETs) based on two-dimensional materials have emerged as promising candidates for low-power electronic applications. In this study, we explore the electronic and transport properties of a bismuthene nanoribbon TFET using density functional theory combined with...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/adf13f |
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