Preparation of the group III nitride thin films AlN, GaN, InN by direct and reactive pulsed laser ablation
The methods of preparation of the group III nitrides AlN, GaN, and InN by laser ablation (i.e. laser sputtering), is here reviewed including studies on their properties. The technique, concerns direct ablation of nitride solid targets by laser to produce a plume which is collected on a substrate. Al...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/S1110662X01000137 |
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