Strain-engineered optical gain in GaAs0.4Sb0.6/InP0.9Sb0.1 type-II heterostructures for near-infrared nano-optoelectronics
This study investigates the enhancement of optical gain in type-II GaAs0.4Sb0.6/InP0.6Sb0.1 nanoscale heterostructures under externally applied uniaxial strain for potential applications in near-infrared optoelectronic devices. Using the 6 × 6 Luttinger-Kohn model within the k·p perturbation framewo...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-09-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379725002955 |
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