Strain-engineered optical gain in GaAs0.4Sb0.6/InP0.9Sb0.1 type-II heterostructures for near-infrared nano-optoelectronics

This study investigates the enhancement of optical gain in type-II GaAs0.4Sb0.6/InP0.6Sb0.1 nanoscale heterostructures under externally applied uniaxial strain for potential applications in near-infrared optoelectronic devices. Using the 6 × 6 Luttinger-Kohn model within the k·p perturbation framewo...

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Bibliographic Details
Main Authors: Amit Rathi, Priya Chaudhary, Amit Kumar Goyal
Format: Article
Language:English
Published: Elsevier 2025-09-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379725002955
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