Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials
In this paper a study of various short channel effects (SCE’s) of double gate n-FinFET structure as a function of scaling parameters for Si, GaAs, GaSb and GaN channel materials has been evaluated and presented. The simulation results presented are based on the self consistent solution of Poisson an...
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| Format: | Article |
| Language: | English |
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Sumy State University
2015-10-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03010.pdf |
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| author | Tawseef A. Bhat M. Mustafa M.R. Beigh |
| author_facet | Tawseef A. Bhat M. Mustafa M.R. Beigh |
| author_sort | Tawseef A. Bhat |
| collection | DOAJ |
| description | In this paper a study of various short channel effects (SCE’s) of double gate n-FinFET structure as a function of scaling parameters for Si, GaAs, GaSb and GaN channel materials has been evaluated and presented. The simulation results presented are based on the self consistent solution of Poisson and drift-diffusion equations. In the model the carrier velocity is assumed to be saturated in the channel for all the materials. Gate length (Lg) and channel width (Wch) dependence of the various short channel effects viz., Drain Induced Barrier Lowering (DIBL), Subthreshold Slope (SS) and threshold voltage roll-off of these devices using the said materials have been studied and presented. |
| format | Article |
| id | doaj-art-6e00af193c2f4eec91eff4a31ea8dab3 |
| institution | Kabale University |
| issn | 2077-6772 |
| language | English |
| publishDate | 2015-10-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-6e00af193c2f4eec91eff4a31ea8dab32025-08-20T03:33:56ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722015-10-017303010-103010-5Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel MaterialsTawseef A. Bhat0M. Mustafa1M.R. Beigh2Department of Electronics, Govt. Degree College (Boys), Anantnag-192101 IndiaDepartment of Electronics & Instrumentation Technology, University of Kashmir, Srinagar-190006 IndiaDepartment of Electronics & Instrumentation Technology, University of Kashmir, Srinagar-190006 IndiaIn this paper a study of various short channel effects (SCE’s) of double gate n-FinFET structure as a function of scaling parameters for Si, GaAs, GaSb and GaN channel materials has been evaluated and presented. The simulation results presented are based on the self consistent solution of Poisson and drift-diffusion equations. In the model the carrier velocity is assumed to be saturated in the channel for all the materials. Gate length (Lg) and channel width (Wch) dependence of the various short channel effects viz., Drain Induced Barrier Lowering (DIBL), Subthreshold Slope (SS) and threshold voltage roll-off of these devices using the said materials have been studied and presented.http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03010.pdfSCEDIBLSSThreshold voltageFinFETITR |
| spellingShingle | Tawseef A. Bhat M. Mustafa M.R. Beigh Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials Журнал нано- та електронної фізики SCE DIBL SS Threshold voltage FinFET ITR |
| title | Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials |
| title_full | Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials |
| title_fullStr | Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials |
| title_full_unstemmed | Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials |
| title_short | Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials |
| title_sort | study of short channel effects in n finfet structure for si gaas gasb and gan channel materials |
| topic | SCE DIBL SS Threshold voltage FinFET ITR |
| url | http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03010.pdf |
| work_keys_str_mv | AT tawseefabhat studyofshortchanneleffectsinnfinfetstructureforsigaasgasbandganchannelmaterials AT mmustafa studyofshortchanneleffectsinnfinfetstructureforsigaasgasbandganchannelmaterials AT mrbeigh studyofshortchanneleffectsinnfinfetstructureforsigaasgasbandganchannelmaterials |