Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials
In this paper a study of various short channel effects (SCE’s) of double gate n-FinFET structure as a function of scaling parameters for Si, GaAs, GaSb and GaN channel materials has been evaluated and presented. The simulation results presented are based on the self consistent solution of Poisson an...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2015-10-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03010.pdf |
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