The Asymmetry of the Distribution Density Volume Uncompensated Charge at the Metallurgical p-n Junction
The features of the formation of shallow junction and its calculation for a solar cell based on single-crystal silicon with front boron were considered. The ambiguity of the calculated profiles recompensating impurity, which is dependent on the accuracy of the constants of diffusion equations, was s...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2012-11-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2012/3/articles/jnep_2012_V4_03026.pdf |
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