Phase‐Coherent Transport in GeSn Alloys on Si
Abstract Germanium‐Tin (GeSn) is a novel semiconductor Group IV alloy that can be tuned from indirect to direct bandgap semiconductors by adjusting the Sn content. This property makes this alloy class attractive for integrated photonic applications and high‐mobility electronic devices. In this work,...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-02-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400565 |
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| author | Prateek Kaul Omar Concepción Daan H. Wielens Patrick Zellekens Chuan Li Zoran Ikonic Koji Ishibashi Qing‐Tai Zhao Alexander Brinkman Detlev Grützmacher Dan Buca |
| author_facet | Prateek Kaul Omar Concepción Daan H. Wielens Patrick Zellekens Chuan Li Zoran Ikonic Koji Ishibashi Qing‐Tai Zhao Alexander Brinkman Detlev Grützmacher Dan Buca |
| author_sort | Prateek Kaul |
| collection | DOAJ |
| description | Abstract Germanium‐Tin (GeSn) is a novel semiconductor Group IV alloy that can be tuned from indirect to direct bandgap semiconductors by adjusting the Sn content. This property makes this alloy class attractive for integrated photonic applications and high‐mobility electronic devices. In this work, the GeSn alloy properties are investigated in the view of applications fields such as spintronics and quantum computing. Using low‐temperature magneto‐transport measurements, electron interference effects and deriving typical mesoscopic benchmark parameters such as the phase‐coherence length in GeSn‐based Hall bar structures for Sn concentrations up to 14 at.% is investigated. Furthermore, Shubnikov–de Haas oscillations provide direct access to the effective mass of the Γ‐valley electrons as well as the charge carrier mobility. This work provides a new insight into advanced group IV alloys desired for the study of spin dynamics and its quantum computing applications. |
| format | Article |
| id | doaj-art-6d8fa1828ed34107bf4fbd343dd92e4b |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-6d8fa1828ed34107bf4fbd343dd92e4b2025-08-20T02:29:38ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-02-01112n/an/a10.1002/aelm.202400565Phase‐Coherent Transport in GeSn Alloys on SiPrateek Kaul0Omar Concepción1Daan H. Wielens2Patrick Zellekens3Chuan Li4Zoran Ikonic5Koji Ishibashi6Qing‐Tai Zhao7Alexander Brinkman8Detlev Grützmacher9Dan Buca10Peter Grünberg Institute – 9 (PGI‐9) Forschungzentrum Jülich 52428 Jülich GermanyPeter Grünberg Institute – 9 (PGI‐9) Forschungzentrum Jülich 52428 Jülich GermanyMESA+ Institute for Nanotechnology University of Twente Enschede 7522 NB The NetherlandsRIKEN Center for Emergent Matter Science 2‐1, Hirosawa Wako Saitama 351‐0198 JapanMESA+ Institute for Nanotechnology University of Twente Enschede 7522 NB The NetherlandsSchool of Electronic and Electrical Engineering University of Leeds Leeds LS2 9JT UKRIKEN Center for Emergent Matter Science 2‐1, Hirosawa Wako Saitama 351‐0198 JapanPeter Grünberg Institute – 9 (PGI‐9) Forschungzentrum Jülich 52428 Jülich GermanyMESA+ Institute for Nanotechnology University of Twente Enschede 7522 NB The NetherlandsPeter Grünberg Institute – 9 (PGI‐9) Forschungzentrum Jülich 52428 Jülich GermanyPeter Grünberg Institute – 9 (PGI‐9) Forschungzentrum Jülich 52428 Jülich GermanyAbstract Germanium‐Tin (GeSn) is a novel semiconductor Group IV alloy that can be tuned from indirect to direct bandgap semiconductors by adjusting the Sn content. This property makes this alloy class attractive for integrated photonic applications and high‐mobility electronic devices. In this work, the GeSn alloy properties are investigated in the view of applications fields such as spintronics and quantum computing. Using low‐temperature magneto‐transport measurements, electron interference effects and deriving typical mesoscopic benchmark parameters such as the phase‐coherence length in GeSn‐based Hall bar structures for Sn concentrations up to 14 at.% is investigated. Furthermore, Shubnikov–de Haas oscillations provide direct access to the effective mass of the Γ‐valley electrons as well as the charge carrier mobility. This work provides a new insight into advanced group IV alloys desired for the study of spin dynamics and its quantum computing applications.https://doi.org/10.1002/aelm.202400565GeSn alloysgroup IV semiconductorsmagneto‐transportspintronicstopological |
| spellingShingle | Prateek Kaul Omar Concepción Daan H. Wielens Patrick Zellekens Chuan Li Zoran Ikonic Koji Ishibashi Qing‐Tai Zhao Alexander Brinkman Detlev Grützmacher Dan Buca Phase‐Coherent Transport in GeSn Alloys on Si Advanced Electronic Materials GeSn alloys group IV semiconductors magneto‐transport spintronics topological |
| title | Phase‐Coherent Transport in GeSn Alloys on Si |
| title_full | Phase‐Coherent Transport in GeSn Alloys on Si |
| title_fullStr | Phase‐Coherent Transport in GeSn Alloys on Si |
| title_full_unstemmed | Phase‐Coherent Transport in GeSn Alloys on Si |
| title_short | Phase‐Coherent Transport in GeSn Alloys on Si |
| title_sort | phase coherent transport in gesn alloys on si |
| topic | GeSn alloys group IV semiconductors magneto‐transport spintronics topological |
| url | https://doi.org/10.1002/aelm.202400565 |
| work_keys_str_mv | AT prateekkaul phasecoherenttransportingesnalloysonsi AT omarconcepcion phasecoherenttransportingesnalloysonsi AT daanhwielens phasecoherenttransportingesnalloysonsi AT patrickzellekens phasecoherenttransportingesnalloysonsi AT chuanli phasecoherenttransportingesnalloysonsi AT zoranikonic phasecoherenttransportingesnalloysonsi AT kojiishibashi phasecoherenttransportingesnalloysonsi AT qingtaizhao phasecoherenttransportingesnalloysonsi AT alexanderbrinkman phasecoherenttransportingesnalloysonsi AT detlevgrutzmacher phasecoherenttransportingesnalloysonsi AT danbuca phasecoherenttransportingesnalloysonsi |