Phase‐Coherent Transport in GeSn Alloys on Si

Phase‐Coherent Transport in GeSn Alloys on Si

Abstract Germanium‐Tin (GeSn) is a novel semiconductor Group IV alloy that can be tuned from indirect to direct bandgap semiconductors by adjusting the Sn content. This property makes this alloy class attractive for integrated photonic applications and high‐mobility electronic devices. In this work,...

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Bibliographic Details
Main Authors: Prateek Kaul, Omar Concepción, Daan H. Wielens, Patrick Zellekens, Chuan Li, Zoran Ikonic, Koji Ishibashi, Qing‐Tai Zhao, Alexander Brinkman, Detlev Grützmacher, Dan Buca
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Electronic Materials
Subjects:
GeSn alloys
group IV semiconductors
magneto‐transport
spintronics
topological
Online Access:https://doi.org/10.1002/aelm.202400565
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https://doi.org/10.1002/aelm.202400565

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