Flexible Organic Field‐Effect Transistor (OFET) Based 2T0C DRAM Cells with 2‐Bit Operation and Extended Retention

Flexible Organic Field‐Effect Transistor (OFET) Based 2T0C DRAM Cells with 2‐Bit Operation and Extended Retention

Abstract The emerging demand of data storage in wearable devices, flexible circuits based on organic semiconductor materials are encouraged, while organic field effect transistors face the challenges of low operating voltage and high on/off ratio. In this work, a high‐performance flexible organic fi...

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Bibliographic Details
Main Authors: Xuemeng Hu, Zhenhai Li, Tianyang Feng, Jialin Meng, Qingxuan Li, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen
Format: Article
Language:English
Published: Wiley 2025-05-01
Series:Advanced Science
Subjects:
finite element analysis
flexible 2T0C DRAM cells
long retention
multilevel storage
organic field effect transistors
Online Access:https://doi.org/10.1002/advs.202500300
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https://doi.org/10.1002/advs.202500300

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