Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison
During last few decade continuous device performance improvements have been achieved through a combination of device scaling, new device structures and material property improvement to its fundamental limits. Conventional silicon (bulk CMOS) technology can’t overcome the fundamental physical limitat...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%203/articles/jnep_2011_V3_N1(Part3)_569-575.pdf |
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