Memory Manufacture Under Microgravity (MMuM): In‐Space Manufactured ZnO‐Based Resistive Random Access Memory for Emerging Computing Application

Memory Manufacture Under Microgravity (MMuM): In‐Space Manufactured ZnO‐Based Resistive Random Access Memory for Emerging Computing Application

Abstract Resistive random access memory (RRAM) has attracted industrial and academic interests in emulating biological synapse features for neuromorphic computing for its flexibility and feasibility of analog behaviors. In this paper, two types of ZnO‐based crossbar RRAMs are presented by electrohyd...

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Bibliographic Details
Main Authors: Yujian Huang, Liangkui Jiang, Matthew Marander, Sai Prakash Maddineni, Hantang Qin, Shan Jiang, Curtis W. Hill, Myeong‐Lok Seol, Ying‐Chen Daphne Chen
Format: Article
Language:English
Published: Wiley-VCH 2025-08-01
Series:Advanced Electronic Materials
Subjects:
non‐volatile memory
neuromorphic computing
oxide
RRAM
thin film
Online Access:https://doi.org/10.1002/aelm.202500114
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https://doi.org/10.1002/aelm.202500114

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