Low-loss Si3N4 optical power splitter based on edge optimization design
With the development of information technology, the demand for smaller and more efficient optical devices is increasing. Utilizing complementary metal oxide semiconductor (CMOS) technology, Si3N4 optical power splitters were fabricated and tested. The results demonstrate that at a wavelength of 1 55...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Science Press (China Science Publishing & Media Ltd.)
2024-09-01
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| Series: | Shenzhen Daxue xuebao. Ligong ban |
| Subjects: | |
| Online Access: | https://journal.szu.edu.cn/en/#/digest?ArticleID=2675 |
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| Summary: | With the development of information technology, the demand for smaller and more efficient optical devices is increasing. Utilizing complementary metal oxide semiconductor (CMOS) technology, Si3N4 optical power splitters were fabricated and tested. The results demonstrate that at a wavelength of 1 550 nm, the total loss of the 1×8 power splitter by edge optimization is only 1.30 dB, and compared with the traditional design, the volume can be reduced by 30%. In this research, the inverse optimization algorithm is used to overcome the limitation of traditional design only for the regular graphic, which can provide a feasible approach to the design of compact and low-loss optical power splitters. |
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| ISSN: | 1000-2618 |