Indirect Thermographic Measurement of the Temperature of a Transistor Die during Pulse Operation
This paper presents aspects related to the indirect thermographic measurement of a C2M0280120D transistor in pulse mode. The tested transistor was made on the basis of silicon carbide and is commonly used in many applications. During the research, the pulse frequency was varied from 1 kHz to 800 kHz...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-10-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/24/19/6452 |
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