Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure

Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure

The selective phase growth of Ti-based oxide thin films on sapphire substrates is crucial in controlling the electronic properties, such as the insulator-to-metal transition (IMT). Thin films are generally prepared by pulsed laser deposition under high temperatures, but it is challenging to obtain a...

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Bibliographic Details
Main Authors: Jiayi Tang, Okkyun Seo, Jaemyung Kim, Ibrahima Gueye, L.S.R. Kumara, Ho Jun Oh, Wan-Gil Jung, Won-Jin Moon, Yong Tae Kim, Satoshi Yasuno, Tappei Nishihara, Akifumi Matsuda, Osami Sakata
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Applied Surface Science Advances
Subjects:
Epitaxial thin films
Crystal structure
Electronic structure
Oxygen partial pressure
Insulator-to-metal transition
Online Access:http://www.sciencedirect.com/science/article/pii/S2666523925000157
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