High-throughput numerical modeling of the tunable synaptic behavior in 2D MoS2 memristive devices

Abstract Memristive devices based on two-dimensional (2D) materials have emerged as potential synaptic candidates for next-generation neuromorphic computing hardware. Here, we introduce a numerical modeling framework that facilitates efficient exploration of the large parameter space for 2D memristi...

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Bibliographic Details
Main Authors: Benjamin Spetzler, Vinod K. Sangwan, Mark C. Hersam, Martin Ziegler
Format: Article
Language:English
Published: Nature Portfolio 2025-02-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-025-00530-y
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