'I-V Characteristic and Crystal Structural Of a-As/c-Si Heterojunctions
In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition r_d(1.04nm/sec) as function to annealing temperature (373 and 473K), from XRD analysis we can see that the degree of crystalline increase with T_a, and I-V characteristic for dark a...
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| Format: | Article |
| Language: | English |
| Published: |
University of Baghdad, College of Science for Women
2014-06-01
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| Series: | مجلة بغداد للعلوم |
| Subjects: | |
| Online Access: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2673 |
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