2D ferroelectric narrow-bandgap semiconductor Wurtzite’ type α-In2Se3 and its silicon-compatible growth

2D ferroelectric narrow-bandgap semiconductor Wurtzite’ type α-In2Se3 and its silicon-compatible growth

Abstract 2D van der Waals ferroelectrics, particularly α-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate band gap and robust ferroelectricity stabilized by dipole locking. α-In2Se3 can adopt either the distorted zincblen...

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Main Authors: Yuxuan Jiang, Xingkun Ning, Renhui Liu, Kepeng Song, Sajjad Ali, Haoyue Deng, Yizhuo Li, Biaohong Huang, Jianhang Qiu, Xiaofei Zhu, Zhen Fan, Qiankun Li, Chengbing Qin, Fei Xue, Teng Yang, Bing Li, Gang Liu, Weijin Hu, Lain-Jong Li, Zhidong Zhang
Format: Article
Language:English
Published: Nature Portfolio 2025-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-62822-7
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https://doi.org/10.1038/s41467-025-62822-7

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