Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) grown on <italic>c</italic>-plane substrates. In this paper, we propose a novel DUV LED structure embedded...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8735890/ |
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