Theoretical insights into the role of defects in the optimization of the electrochemical capacitance of graphene
Graphene-based frameworks suffer from a low quantum capacitance due to graphene’s Dirac point at the Fermi level. This theoretical study investigated the effect structural defects, nitrogen and boron doping, and surface epoxy/hydroxy groups have on the electronic structure and capacitance of graphen...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Tsinghua University Press
2024-09-01
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| Series: | Energy Materials and Devices |
| Subjects: | |
| Online Access: | https://www.sciopen.com/article/10.26599/EMD.2024.9370035 |
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