High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates
Abstract Inorganic semiconductor nanowires, known for their exceptional electronic properties and mechanical flexibility, are widely regarded as the ideal 1D channel materials for creating high‐performance flexible electronics. In this work, the integration of ordered arrays of silicon nanowire (SiN...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-04-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400615 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849715319631773696 |
|---|---|
| author | Ting Zhang Ying Sun Ruijin Hu Wentao Qian Linwei Yu |
| author_facet | Ting Zhang Ying Sun Ruijin Hu Wentao Qian Linwei Yu |
| author_sort | Ting Zhang |
| collection | DOAJ |
| description | Abstract Inorganic semiconductor nanowires, known for their exceptional electronic properties and mechanical flexibility, are widely regarded as the ideal 1D channel materials for creating high‐performance flexible electronics. In this work, the integration of ordered arrays of silicon nanowire (SiNW) field effect transistors (FETs) directly onto flexible plastic substrates is showcased. The self‐aligned crystalline SiNW multi‐channels are first grown through an in‐plane solid–liquid–solid mechanism on rigid substrates, and then efficiently transferred in‐batch onto flexible polyethylene terephthalate (PET) plastics. The FETs constructed on these transferred SiNW channels exhibit outstanding performance, with a high on/off current ratio of >105, a low subthreshold swing of 175 mV dec−1, and remarkable mechanical stability that can endure an extremely small bending radius of 0.5 mm for 1000 cycles. Furthermore, inverter logics are also successfully demonstrated on plastic substrates, highlighting a prominent routine for scalable integration of high‐quality SiNW channels in the development of low‐cost, high‐performance flexible displays and wearable electronics. |
| format | Article |
| id | doaj-art-65e8fce37600461a932be21e0a16f95f |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-65e8fce37600461a932be21e0a16f95f2025-08-20T03:13:26ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-04-01115n/an/a10.1002/aelm.202400615High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic SubstratesTing Zhang0Ying Sun1Ruijin Hu2Wentao Qian3Linwei Yu4National Laboratory of Solid‐State Microstructures/School of Electronics Science and Engineering Nanjing University Nanjing 210093 ChinaNational Laboratory of Solid‐State Microstructures/School of Electronics Science and Engineering Nanjing University Nanjing 210093 ChinaNational Laboratory of Solid‐State Microstructures/School of Electronics Science and Engineering Nanjing University Nanjing 210093 ChinaNational Laboratory of Solid‐State Microstructures/School of Electronics Science and Engineering Nanjing University Nanjing 210093 ChinaNational Laboratory of Solid‐State Microstructures/School of Electronics Science and Engineering Nanjing University Nanjing 210093 ChinaAbstract Inorganic semiconductor nanowires, known for their exceptional electronic properties and mechanical flexibility, are widely regarded as the ideal 1D channel materials for creating high‐performance flexible electronics. In this work, the integration of ordered arrays of silicon nanowire (SiNW) field effect transistors (FETs) directly onto flexible plastic substrates is showcased. The self‐aligned crystalline SiNW multi‐channels are first grown through an in‐plane solid–liquid–solid mechanism on rigid substrates, and then efficiently transferred in‐batch onto flexible polyethylene terephthalate (PET) plastics. The FETs constructed on these transferred SiNW channels exhibit outstanding performance, with a high on/off current ratio of >105, a low subthreshold swing of 175 mV dec−1, and remarkable mechanical stability that can endure an extremely small bending radius of 0.5 mm for 1000 cycles. Furthermore, inverter logics are also successfully demonstrated on plastic substrates, highlighting a prominent routine for scalable integration of high‐quality SiNW channels in the development of low‐cost, high‐performance flexible displays and wearable electronics.https://doi.org/10.1002/aelm.202400615field effect transistorsflexible electronicsmechanical stabilitysilicon nanowires |
| spellingShingle | Ting Zhang Ying Sun Ruijin Hu Wentao Qian Linwei Yu High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates Advanced Electronic Materials field effect transistors flexible electronics mechanical stability silicon nanowires |
| title | High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates |
| title_full | High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates |
| title_fullStr | High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates |
| title_full_unstemmed | High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates |
| title_short | High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates |
| title_sort | high performance flexible silicon nanowire field effect transistors on plastic substrates |
| topic | field effect transistors flexible electronics mechanical stability silicon nanowires |
| url | https://doi.org/10.1002/aelm.202400615 |
| work_keys_str_mv | AT tingzhang highperformanceflexiblesiliconnanowirefieldeffecttransistorsonplasticsubstrates AT yingsun highperformanceflexiblesiliconnanowirefieldeffecttransistorsonplasticsubstrates AT ruijinhu highperformanceflexiblesiliconnanowirefieldeffecttransistorsonplasticsubstrates AT wentaoqian highperformanceflexiblesiliconnanowirefieldeffecttransistorsonplasticsubstrates AT linweiyu highperformanceflexiblesiliconnanowirefieldeffecttransistorsonplasticsubstrates |