High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates

High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates

Abstract Inorganic semiconductor nanowires, known for their exceptional electronic properties and mechanical flexibility, are widely regarded as the ideal 1D channel materials for creating high‐performance flexible electronics. In this work, the integration of ordered arrays of silicon nanowire (SiN...

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Bibliographic Details
Main Authors: Ting Zhang, Ying Sun, Ruijin Hu, Wentao Qian, Linwei Yu
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Electronic Materials
Subjects:
field effect transistors
flexible electronics
mechanical stability
silicon nanowires
Online Access:https://doi.org/10.1002/aelm.202400615
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https://doi.org/10.1002/aelm.202400615

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