Strained-channel Si n-MOSFET with GaN-drain via dual-step selective epitaxy for mobility enhancement on Si(100) substrate

Strained-channel Si n-MOSFET with GaN-drain via dual-step selective epitaxy for mobility enhancement on Si(100) substrate

This work explores the integration of strained-channel silicon n-MOSFET with GaN drain using the dual-step selective area epitaxial growth of GaN process, enabling CMOS-compatible, fully selective GaN growth with an excellent GaN/Si interface while adopting a GaN-drain-first manufacturing strategy t...

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Bibliographic Details
Main Authors: Cheng-Jun Huang, Shuo Hwai, Tsai-Fu Chung, Chien-Nan Hsiao, Bo-Cheng Lin, Hung-Ching Tsai, Chi Huang Lui, Edward Yi Chang, Mau-Chung Frank Chang
Format: Article
Language:English
Published: AIP Publishing LLC 2025-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0264613
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http://dx.doi.org/10.1063/5.0264613

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