Interface effects in the phase determination of Hf0.5Zr0.5O2 epitaxial thin films
HfO2-based ferroelectrics show tremendous potential for applications in computing technologies, but questions remain as to what dictates the stabilization of the desired phase. Here, it is demonstrated that the substrate the film is grown on is more influential than factors such as thickness, defect...
Saved in:
Main Authors: | Jesse Schimpf, Wang Zhang, Mahir Manna, Sandhya Susarla, Xue-Zeng Lu, James M. Rondinelli, Lane W. Martin |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2025-01-01
|
Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0243530 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories
by: Kun Chen, et al.
Published: (2025-02-01) -
Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors
by: Matthew Webb, et al.
Published: (2025-01-01) -
Direct Synthesis of (K0.5Na0.5)NbO3 Powders by Mechanochemical Method
by: Nguyen Duc Van
Published: (2013-01-01) -
Core-shell or Janus-like Fe0.5Ni0.5 nanostructures: A theoretical and experimental study
by: J. Rojas-Nunez, et al.
Published: (2025-01-01) -
HYDROGEN DEFECTS ON THE SURFACE OF LEAD-FREE FERROELECTRIC Na\(_{0.5}\)Bi\(_{0.5}\)TiO\(_3\) MATERIALS
by: Tien Lam Vu, et al.
Published: (2024-08-01)