Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
GaN p–n diodes were fabricated by contactless photo-electrochemical (PEC) etching, and their electrical characteristics were evaluated. A high vertical etching rate of 80 nm min ^−1 , which is usable for device fabrication etching processes, was achieved using a H₃PO₄ based electrolyte containing S₂...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adbc43 |
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