Multilayer MoS<sub>2</sub> Schottky Barrier Field Effect Transistor

Multilayer MoS<sub>2</sub> Schottky Barrier Field Effect Transistor

The miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB-FETs). Following the trend, this study presents...

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Bibliographic Details
Main Authors: Sebastiano De Stefano, Alfredo Spuri, Raffaele Barbella, Ofelia Durante, Adolfo Mazzotti, Andrea Sessa, Angelo Di Bernardo, Antonio Di Bartolomeo
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Open Journal of Nanotechnology
Subjects:
Schottky barrier FET
two-dimensional materials
molybdenum disulphide
nanoelectronics
Online Access:https://ieeexplore.ieee.org/document/10935823/
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https://ieeexplore.ieee.org/document/10935823/

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