Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT
Dynamic performances of recessed-gate GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) enabled by argon-based neutral beam etching (Ar-NBE) are comprehensively investigated. Upon positive gate stressing, a minimal shift of + 0.27 V in the threshold voltage (Vth) is observe...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-06-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000124 |
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| Summary: | Dynamic performances of recessed-gate GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) enabled by argon-based neutral beam etching (Ar-NBE) are comprehensively investigated. Upon positive gate stressing, a minimal shift of + 0.27 V in the threshold voltage (Vth) is observed, due to capture of electrons by interface traps at the Al2O3/AlGaN interface. Dynamic ON-resistance (Ron) and drain current degradation are also studied by applying various drain voltage values and durations. Moreover, interface characterizations by conductance method and deep-level transient spectroscopy (DLTS) both confirm the superior interface quality achieved by NBE processing, with a low interface trap density (Dit) of 1.19 × 1012 cm-2 eV-1. The results underscore NBE recessing as an attractive approach for manufacturing highly-reliable normally-off GaN MOSHEMTs for next-generation high-frequency power conversion systems. |
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| ISSN: | 2772-3704 |