Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT

Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT

Dynamic performances of recessed-gate GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) enabled by argon-based neutral beam etching (Ar-NBE) are comprehensively investigated. Upon positive gate stressing, a minimal shift of + 0.27 V in the threshold voltage (Vth) is observe...

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Bibliographic Details
Main Authors: Yitai Zhu, Haitao Du, Yu Zhang, Haolan Qu, Han Gao, Haodong Jiang, Wenhui Xu, Xin Ou, Xinbo Zou
Format: Article
Language:English
Published: Elsevier 2025-06-01
Series:Power Electronic Devices and Components
Subjects:
GaN MOSHEMT
Enhancement mode
Neutral beam etching
Dynamic characteristic
Interface trap
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370425000124
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