APA (7th ed.) Citation

Singh, A., Ganeriwala, M. D., Joglekar, R., & Mohapatra, N. R. A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors. IEEE.

Chicago Style (17th ed.) Citation

Singh, Aishwarya, Mohit D. Ganeriwala, Radhika Joglekar, and Nihar R. Mohapatra. A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors. IEEE.

MLA (9th ed.) Citation

Singh, Aishwarya, et al. A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors. IEEE.