A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors

A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors

This study introduces a physics-based, SPICE-compatible model for Nanosheet Field-Effect Transistors (NsFETs) that offers explicit expressions for the drain current, terminal charges, and intrinsic capacitances applicable to both p-type and n-type devices. The carrier transport is modeled using the...

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Bibliographic Details
Main Authors: Aishwarya Singh, Mohit D. Ganeriwala, Radhika Joglekar, Nihar R. Mohapatra
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Terminal charges
nanosheet FET
Ward-Dutton
quantum confinement
bottom-up scalable compact model
Online Access:https://ieeexplore.ieee.org/document/10878980/
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https://ieeexplore.ieee.org/document/10878980/

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