Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs
TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2015/460416 |
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