T-gate with dual dielectric layer for p-GaN/AlGaN/GaN HFETs: Suppressed gate leakage current and increased gate voltage range
In this paper, a T-shaped gate with a dual dielectric layer is proposed for enhancement-mode p-GaN/AlGaN/GaN heterojunction field-effect transistors (HFETs), designed to reduce gate leakage current and improve gate forward breakdown voltage. The proposed dual dielectric layer, comprising Al2O3 and S...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-07-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379725001883 |
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